Yassievich, I. : rechercher sur Z-Library

Année:

1994

Langue:

english

Fichier:

PDF, 430 KB

english, 1994

Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors

Ganichev, S., Ziemann, E., Prettl, W., Yassievich, I., Istratov, A., Weber, E.

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 69 KB

english, 2000

Single-particle states in spherical Si∕SiO2 quantum dots

Moskalenko, A., Berakdar, J., Prokofiev, A., Yassievich, I.

Journal:

O. B. Gusev, A. N. Poddubny, A. A. Prokofiev, I. N. Yassievich

Année:

2007

Langue:

english

Fichier:

PDF, 325 KB

english, 2007

Light emission from silicon nanocrystals

Journal:

Semiconductors

Année:

2013

Langue:

english

Fichier:

PDF, 559 KB

english, 2013

/Si quantum wells by space-charge spectroscopy

Schmalz, K., Yassievich, I. N., Rücker, H., Grimmeiss, H. G., Frankenfeld, H., Mehr, W., Osten, H. J., Schley, P., Zeindl, H. P.

Journal:

Poddubny, A.N., Prokofiev, A. A., Moskalenko, A. S., Goupalov, S. V., Yassievich, I. N.

Année:

1994

Langue:

english

Fichier:

PDF, 857 KB

english, 1994

[IEEE 2008 5th IEEE International Conference on Group IV Photonics - Sorrento, Italy (2008.09.17-2008.09.19)] 2008 5th IEEE International Conference on Group IV Photonics - Intraband radiative and nonradiative transitions of carriers confined in Si nanocrystals

Année:

2008

Langue:

english

Fichier:

PDF, 246 KB

english, 2008

Multiphonon Recombination in Semiconductors

Yassievich, I.N.

Journal:

Materials Science Forum

Année:

1989

Fichier:

PDF, 648 KB

1989

Shallow Acceptor States in SiGe Quantum Wells

M.S. Kagan, I.V. Altukhov, K.A. Korolev, D.V. Orlov, V.P. Sinis, K. Schmalz, S.G. Thomas, K.L. Wang, I.N. Yassievich

Journal:

M.A. Odnoblyudov, V.M. Chistyakov, I.N. Yassievich, M.S. Kagan

Année:

1998

Langue:

english

Fichier:

PDF, 133 KB

english, 1998

Resonant States in Strained Semiconductors

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 154 KB

english, 1998

Lateral Transport in Strained SiGe Quantum Wells Doped with Boron

M. S. Kagan, I. V. Altukhov, K. A. Korolev, D. V. Orlov, V. P. Sinis, S. G. Thomas, K. L. Wang, I. N. Yassievich

Journal:

Superlattices and Microstructures

Année:

1999

Langue:

english

Fichier:

PDF, 137 KB

english, 1999

Effective barriers induced by confined carriers in space charge spectroscopy of Si/Ge quantum wells

K. Schmalz, H. Rücker, H.P. Zeindl, I.N. Yassievich

Journal:

Année:

1994

Fichier:

PDF, 162 KB

1994

Lateral transport in boron doped SiGe quantum wells

M.S. Kagan, I.V. Altukhov, K.A. Korolev, D.V. Orlov, V.P. Sinis, S.G. Thomas, K.L. Wang, K. Schmalz, I.N. Yassievich

Journal:

Superlattices and Microstructures

Année:

1999

Langue:

english

Fichier:

PDF, 53 KB

english, 1999

Characterization of the valence band offset in p-Si/Si1−xGex/Si by space charge spectroscopy

K. Schmalz, H. Rücker, I.N. Yassievich, H.G. Grimmeiss, B. Dietrich, H. Frankenfeld, W. Mehr, H.J. Osten, P. Schley

Journal:

Solid-State Electronics

Année:

1994

Langue:

english

Fichier:

PDF, 368 KB

english, 1994

Two-dimensional A+ states in boron doped SiGe quantum structures

I.N. Yassievich, K. Schmalz, M.A. Odnoblyudov, M.S. Kagan

Journal:

Solid-State Electronics

Année:

1996

Langue:

english

Fichier:

PDF, 261 KB

english, 1996

New size effect in the catalysis by interacting copper nanoparticles

T.N. Rostovshchikova, V.V. Smirnov, V.M. Kozhevin, D.A. Yavsin, M.A. Zabelin, I.N. Yassievich, S.A. Gurevich

Journal:

Applied Catalysis A: General

Année:

2005

Langue:

english

Fichier:

PDF, 716 KB

english, 2005

Excitation mechanism of erbium photoluminescence in bulk silicon and silicon nanostructures

I.N. Yassievich, A.S. Moskalenko

Journal:

A.A. Prokofiev, A.S. Moskalenko, I.N. Yassievich

Année:

2003

Langue:

english

Fichier:

PDF, 102 KB

english, 2003

Theory of energy transfer between Er3+ ions and carriers confined in Si nanocrystals in SiO2 matrix

Journal:

I.N. Yassievich, A.S. Moskalenko, A.A. Prokofiev

Année:

2008

Langue:

english

Fichier:

PDF, 425 KB

english, 2008

Confined electrons and holes in Si nanocrystals: Theoretical modeling of the energy spectrum and radiative transitions

Journal:

Materials Science and Engineering: C

Année:

2007

Langue:

english

Fichier:

PDF, 499 KB

english, 2007

Microscopic theory of erbium ion de-excitation processes in silicon

A.A. Prokofiev, I.N. Yassievich, H. Vrielinck, T. Gregorkiewicz

Journal:

Optical Materials

Année:

2006

Langue:

english

Fichier:

PDF, 174 KB

english, 2006

Microscopic theory for excitation of erbium ions via silicon nanocrystals in silicon dioxide

I.N. Yassievich, A.S. Moskalenko, A.A. Prokofiev

Journal:

Optical Materials

Année:

2006

Langue:

english

Fichier:

PDF, 195 KB

english, 2006

Magnetic field effect on tunnel ionization of deep impurities by terahertz radiation

S.D. Ganichev, S.N. Danilov, M. Sollinger, J. Zimmermann, A.S. Moskalenko, V.I. Perel, I.N. Yassievich, C. Back, W. Prettl

Journal:

A.A. Prokofiev, A.S. Moskalenko, I.N. Yassievich

Année:

2003

Langue:

english

Fichier:

PDF, 212 KB

english, 2003

Theoretical modeling of excitation and de-excitation processes of Er in SiO2 with Si nanocrystals

Journal:

Journal of Luminescence

Année:

2006

Langue:

english

Fichier:

PDF, 142 KB

english, 2006

Magnetic properties of self-assembled nanostructure films on the base of amorphous Ni granules

Dmitry S. Ilyushenkov, Veniamin I. Kozub, Denis A. Yavsin, Vladimir M. Kozhevin, Irina N. Yassievich, Thanh Trung Nguyen, Ekkes H. Bruck, Sergei A. Gurevich

Journal:

Journal of Magnetism and Magnetic Materials

Année:

2009

Langue:

english

Fichier:

PDF, 366 KB

english, 2009

Ferromagnetic glass on the base of aggregates of Ni amorphous nanogranules

D.S. Ilyushenkov, V.I. Kozub, I.N. Yassievich, T.T. Nguyen, E.H. Bruck

Journal:

Journal of Magnetism and Magnetic Materials

Année:

2011

Langue:

english

Fichier:

PDF, 286 KB

english, 2011

Non-resonant excitation of rare-earth ions via virtual Auger process

I.N. Yassievich

Journal:

Optical Materials

Année:

2011

Langue:

english

Fichier:

PDF, 416 KB

english, 2011

Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures

I.V. Altukhov, E.G. Chirkova, V.P. Sinis, M.S. Kagan, R.T. Troeger, S.K. Ray, J. Kolodzey, A.A. Prokofiev, M.A. Odnoblyudov, I.N. Yassievich

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2003

Langue:

english

Fichier:

PDF, 248 KB

english, 2003

Carrier relaxation in quantum dots

A.A. Prokofiev, S.V. Goupalov, A.S. Moskalenko, A.N. Poddubny, I.N. Yassievich

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 169 KB

english, 2009

New efficient mechanism of excitation of electroluminescence from erbium ions in crystalline silicon

M.S. Bresler, O.B. Gusev, P.E. Pak, N.A. Sobolev, I.N. Yassievich

Journal:

Journal of Luminescence

Année:

1998

Langue:

english

Fichier:

PDF, 105 KB

english, 1998

Terahertz emission of SiGe/Si quantum wells

M.S Kagan, I.V Altukhov, V.P Sinis, S.G Thomas, K.L Wang, K.A Chao, I.N Yassievich

Journal:

Thin Solid Films

Année:

2000

Langue:

english

Fichier:

PDF, 923 KB

english, 2000

Local electric field effects in a SiGe quantum well investigated by photoluminescence

S. Nilsson, U. Penner, K. Schmalz, I.N. Yassievich, Chun-Yen Chang, Wen-Chung Tsai

Journal:

Thin Solid Films

Année:

1997

Fichier:

PDF, 264 KB

1997

Erbium excitation across the bulk of silicon wafer: an effect of p–n junction at Si/Si:Er interface

N.Q. Vinh, I.N. Yassievich, T. Gregorkiewicz

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 135 KB

english, 2001

Configuration interaction applied to resonant states in semiconductors and semiconductor nanostructures

I.N. Yassievich, A. Blom, A.A. Prokofiev, M.A. Odnoblyudov, K.-A. Chao

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 125 KB

english, 2001

Continuous stimulated terahertz emission due to intra-center population inversion in uniaxially strained germanium

I.V Altukhov, M.S Kagan, Yu.P Gousev, V.P Sinis, K.A Korolev, H.K Olsson, Yu.M Galperin, M.A Odnoblyudov, I.N Yassievich, K.-A Chao

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 86 KB

english, 1999

Mechanism of excitation of erbium electroluminescence in amorphous silicon

M.S Bresler, W Fuhs, T Gregorkiewicz, O.B Gusev, P.E Pak, E.I Terukov, K.D Tsendin, I.N Yassievich

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 125 KB

english, 1999

Effective Auger excitation of erbium luminescence by hot electrons in silicon

M.S Bresler, T Gregorkiewicz, O.B Gusev, P.E Pak, I.N Yassievich

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 124 KB

english, 1999

Terahertz tunnel ionization of DX-centers in AlGaAs : Te

H Ketterl, E Ziemann, S.D Ganichev, I.N Yassievich, A Belyaev, S Schmult, W Prettl

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 122 KB

english, 1999

Magnetic field effect on tunnel ionization of deep impurities by far-infrared radiation

A.S Moskalenko, S.D Ganichev, V.I Perel, I.N Yassievich

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 109 KB

english, 1999

Stimulated emission in erbium-doped silicon structures under optical pumping

M.S. Bresler, O.B. Gusev, E.I. Terukov, I.N. Yassievich, B.P. Zakharchenya, V.I. Emel'yanov, B.V. Kamenev, P.K. Kashkarov, E.A. Konstantinova, V.Yu. Timoshenko

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 134 KB

english, 2001

Mechanism of electroluminescence in the amorphous silicon-based erbium-doped structures

I.N. Yassievich, M.S. Bresler, O.B. Gusev, P.E. Pak, K.D. Tsendin, E.I. Terukov

Journal:

Materials Science in Semiconductor Processing

Année:

2001

Langue:

english

Fichier:

PDF, 75 KB

english, 2001

Characterization of deep impurities in semiconductors by terahertz tunneling ionization

S.D. Ganichev, E. Ziemann, I.N. Yassievich, V.I. Perel, W. Prettl

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 125 KB

english, 2001

Resonant states and THz lasing in SiGe quantum well structures δ-doped with boron

M.S Kagan, I.N Yassievich

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2002

Langue:

english

Fichier:

PDF, 73 KB

english, 2002

The effect of phonon heating on photoelectric phenomena

I. N. Yassievich, M. Schleifstein

Journal:

Année:

1970

Langue:

english

Fichier:

PDF, 601 KB

english, 1970

Resonant states in doped quantum wells

A. Blom, M.A. Odnoblyudov, I.N. Yassievich, K.A. Chao

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 80 KB

english, 2003

Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures

M. S. Kagan, I. V. Altukhov, V. P. Sinis, S. K. Paprotskiy, I. N. Yassievich, J. Kolodzey

Journal:

V. N. Abakumov, M. Schleifstein, I. N. Yassievich

Année:

2007

Langue:

english

Fichier:

PDF, 340 KB

english, 2007

The Effect of Phonon Heating on Photoelectric Phenomena (II)

Journal:

A. P. Dmitriev, M. P. Mikhailova, I. N. Yassievich

Année:

1972

Langue:

english

Fichier:

PDF, 677 KB

english, 1972

High Energy Distribution Function in an Electric Field and Electron Impact Ionization in AIIIBV Semiconductors

Journal:

H. Köster Jr., O. V. Kurnosova, I. N. Yassievich

Année:

1982

Langue:

english

Fichier:

PDF, 648 KB

english, 1982

Tunneling from Deep Levels of l–c Type in Electric Fields

Journal:

V. B. Khalfin, M. V. Strikha, I. N. Yassievich

Année:

1985

Langue:

english

Fichier:

PDF, 505 KB

english, 1985

Auger Recombination of Electrons via Deep and Shallow Acceptors

Journal:

A. P. Dmitriev, M. P. Mikhailova, I. N. Yassievich

Année:

1985

Langue:

english

Fichier:

PDF, 771 KB

english, 1985

Impact ionization in AIIIBV semiconductors in high electric fields

Journal:

I. N. Yassievich, M. S. Bresler, O. B. Gusev, Yu. P. Yakovlev

Année:

1987

Langue:

english

Fichier:

PDF, 1.92 MB

english, 1987

Electron Confinement Due to Reflection from the Interface in Heterojunctions

Journal: